Graphene-based modulation-doped superlattice structures

摘要

The electronic transport properties of graphene-based superlattice structuresare investigated. A graphene-based modulation-doped superlattice structuregeometry is proposed and consist of periodically arranged alternate layers:InAs/graphene/GaAs/graphene/GaSb. Undoped graphene/GaAs/graphene structuredisplays relatively high conductance and enhanced mobilities at elevatedtemperatures unlike modulation-doped superlattice structure more steady andless sensitive to temperature and robust electrical tunable control on thescreening length scale. Thermionic current density exhibits enhanced behaviourdue to presence of metallic (graphene) mono-layers in superlattice structure.The proposed superlattice structure might become of great use for new types ofwide-band energy gap quantum devices.